Angstrom-scale flatness using selective nanoscale etching

• Takashi Yatsui,
• Hiroshi Saito and
• Katsuyuki Nobusada

Beilstein J. Nanotechnol. 2017, 8, 2181–2185, doi:10.3762/bjnano.8.217

• that near-field etching is an effective way to etch on the scale of less than 10 nm for both wet and dry etching techniques. In addition, near-field dry etching may be effective for the selective etching of nanoscale structures with large mean free path values. Keywords: Angstrom-scale flatness